200909141-3 adva nced power electronics corp. 1/6 ap30p10gp/s-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com p-channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings thermal data a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the AP30P10GS-HF-3 is in the to-263 package, which is widely used bv -100v fast switching performance r 80mw simple drive requirement low gate charge rohs-compliant , halogen-free i -25 a for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as dc/dc converters. the ap30p10gp-hf-3 is in the to-220 through-hole package which is used where a low pcb footprint or an attached heatsink is required. g d s to-263 (s) g d s to-220 (p) o rdering information AP30P10GS-HF-3 t r rohs-compliant , halogen-free to-2 63, shipped on tape and reel ( 8 00 pcs /reel) ap30p10gp-hf-3 tb rohs-compliant , halogen-free to-2 20, shipped in tubes symbol units v ds v gs i d at t c =2 5 c i d at t c =10 0 c i dm p d at t c =2 5 c t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1 . 4 c /w rthj-a max i mum thermal resistance, junction-ambient 62 c /w -55 to 150 c drain-source voltage - 100 v parameter rating gate-source voltage 20 v continuous drain current - 25 a continuous drain current - 15 a pulsed drain curren t 1 -8 0 a total power dissipation 89 w parameter storage temperature range operating junction temperature range -55 to 150 c g d s
adva nced power electronics corp. 2/6 ap30p10gp/s-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) source-drain diode notes: this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 1. pulse width limited by maximum junction temperature. 2. pulse test symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -100 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-12a - - 80 mw v gs =-4.5v, i d =-8a - - 100 mw v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-12a - 23 - s i dss drain-source leakage current v ds =-80v, v gs =0v - - -25 ua i gss gate-source leakage v gs = 20v, v ds =0v - - 100 na q g total gate charge 2 i d =-18a - 50 80 nc q gs gate-source charge v ds =-80v - 7.5 - nc q gd gate-drain ("miller") charge v gs =-10v - 16.5 - nc t d(on) turn-on delay time 2 v ds =-50v - 12 - ns t r rise time i d =-18a - 33 - ns t d(off) turn-off delay time r g =3.3w ,v gs =-10v - 61 - ns t f fall time r d =2.8w -78- ns c iss input capacitance v gs =0v - 2580 4130 pf c oss output capacitance v ds =-25v - 185 - pf c rss reverse transfer capacitance f=1.0mhz - 140 - pf symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-18a, v gs =0v - - -1.3 v t rr reverse recovery time 2 i s =-18a, v gs =0v, - 53 - ns q rr reverse recovery charge di/dt=-100a/s - 125 - nc
adva nced power electronics corp. 3/6 ap30p10gp/s-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance vs. gate voltage fig 4. normalized on-resistance vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature typical electrical characteristics 60 64 68 72 76 80 24681 0 -v gs , gate-to-source voltage (v) r ds(on) (mw ) i d =-8a t c =25c 0 20 40 60 80 0481 21 62 0 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v - 7 .0v - 6 .0v - 5.0 v v g =-4.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature (c) normalized r ds(on) i d = -12a v g = -10v 0 5 10 15 20 25 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 t j , junction temperature (c) normalized -v gs(th) (v) 0 10 20 30 40 50 60 0481 21 62 0 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -7.0v -6.0v -5.0v v g = -4.0v
adva nced power electronics corp. 4/6 ap30p10gp/s-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveforms fig 12. gate charge waveform typical electrical characteristics (cont.) t d(on) t r t d(off) t f v ds v gs 10% 90% q v g - 10 v q gs q gd q g charge 0 3 6 9 12 15 0 1 02 03 04 05 06 0 q g , total gate charge (nc) -v gs , gate to source voltage (v) v ds = -80v i d = -18a 10 100 1000 10000 1 5 9 1 31 72 12 52 9 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 1 10 100 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc
adva nced power electronics corp. 5/6 ap30p10gp/s-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-220 marking information: to-220 product: ap30p10 gp = rohs-compliant halogen-free to-220 date/lot code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence package code millimeters min nom max a 4.40 4.60 4.80 b 0.76 0.88 1.00 d 8.60 8.80 9.00 c 0.36 0.43 0.50 e 9.80 10.10 10.40 l4 14.70 15.00 15.30 l5 6.20 6.40 6.60 d1 c1 1.25 1.35 1.45 b1 1.17 1.32 1.47 l 13.25 13.75 14.25 e l1 2.60 2.75 2.89 f 3.71 3.84 3.96 e1 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. 2.54 ref. 7.4 ref, symbols 5.10 ref. e1 b b1 e d l4 l1 a c1 c l 30p10gp ywwsss f l5 e d1
adva nced power electronics corp. 6/6 ap30p10gp/s-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-263 marking information: to-263 product: ap30p10 package code: date code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence gs = rohs-compliant halogen-free to-263 millimeters min nom max a 4.25 4.75 5.20 a1 0.00 0.15 0.30 a2 2.20 2.45 2.70 b 0.70 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.45 0.60 c1 1.15 1.30 1.45 d 8.30 8.90 9.40 e 9.70 10.10 10.50 e 2.04 2.54 3.04 l2 ----- 1.50 ----- l3 4.50 4.90 5.30 l4 ----- 1.50 ---- 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. symbols e b b1 e d l2 l3 c1 a . a1 l4 c ywwsss 30p10gs ywwsss e b b1 e d l2 l3 c1 a f a1 l4 c
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